Data for Bend-induced ferroelectric domain walls in α-In2Se3
Citation:
Han, Edmund; Nahid, Shahriar Muhammad; Rakib, Tawfiqur; Nolan, Gillian; F. Ferrari, Paolo; Hossain, M. Abir ; Schleife, André ; Nam, SungWoo; Ertekin, Elif; van der Zande, Arend; Huang, Pinshane (2023): Data for Bend-induced ferroelectric domain walls in α-In2Se3. University of Illinois at Urbana-Champaign. https://doi.org/10.13012/B2IDB-1187822_V1
Persistent link for this dataset:
Dataset Description

STEM images of kinks in α-In2Se3, DFT calculation of bending of α-In2Se3, PFM on as exfoliated and controllably bend α-In2Se3
Subject Physical Sciences
License CC BY
Funder U.S. National Science Foundation (NSF) - Grant: DMR-1720633
Funder Air Force Office of Scientific Research - Grant: FA9550-20-1-0302
Funder Office of Naval Research - Grant: N00014-18-1-2605
Funder U.S. National Science Foundation (NSF) - Grant: DMR-1555278
Corresponding Creator Pinshane Huang
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Related Materials:
   Article Edmund Han, Shahriar Muhammad Nahid, Tawfiqur Rakib, Gillian Nolan, Paolo F. Ferrari, M. Abir Hossain, André Schleife, SungWoo Nam, Elif Ertekin, Arend M. van der Zande, and Pinshane Y. Huang. 2023. Bend-Induced Ferroelectric Domain Walls in α-In2Se3. ACS Nano. doi: 10.1021/acsnano.3c01311
Version DOI Comment Publication Date
1 10.13012/B2IDB-1187822_V1 2023-04-12
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