Illinois Data Bank

Data for Field-Effect Transistors from Artificial Charged Domain Walls in Stacked van der Waals Ferroelectric α-In2Se3

A newer version of this dataset is available. View the latest version.

Note: This dataset has been updated. Please visit V2 instead: https://doi.org/10.13012/B2IDB-4015036_V2

Room-temperature transfer curves; Benchmarking conductance; STEM images of charged domain walls; Temperature-dependent transfer curves; Scaling of conductance, hopping length, threshold voltage, trap density, and field-effect mobility with temperature; Magnetotransport data; Optical, AFM, and PFM image of different field-effect transistors; STEM images of contacts; Output and transfer curves of FETs; Temperature scaling of subthreshold swing and threshold voltage difference; Comparison of maximum field-effect mobility for different structures;

Physical Sciences
CC BY
U.S. National Science Foundation (NSF)-Grant:DMR-2309037
Arend van der Zande
68 times
Version DOI Comment Publication Date
2 10.13012/B2IDB-4015036_V2 Some files in the dataset.zip got updated. Updated the Dataset guideline to match the new dataset. 2026-01-28
1 10.13012/B2IDB-4015036_V1 2025-11-19

93.3 MB File
6.55 KB File

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RelatedMaterial update: {"note"=>[nil, ""]} 2026-01-28T23:08:41Z
Dataset update: {"description"=>["Room-temperature transfer curves; Benchmarking conductance; STEM images of charged domain walls; Temperature-dependent transfer curves; Scaling of conductance, hopping length, threshold voltage, trap density, and field-effect mobility with temperature; Magnetotransport data; Optical, AFM, and PFM image of different field-effect transistors; STEM images of contacts; Output and transfer curves of FETs; Temperature scaling of subthreshold swing and threshold voltage difference; Comparison of maximum field-effect mobility for different structures; ", "<b>Note:</b> This dataset has been updated. Please visit V2 instead: <a herf=\"https://doi.org/10.13012/B2IDB-4015036_V2\">https://doi.org/10.13012/B2IDB-4015036_V2</a>\r\n\r\nRoom-temperature transfer curves; Benchmarking conductance; STEM images of charged domain walls; Temperature-dependent transfer curves; Scaling of conductance, hopping length, threshold voltage, trap density, and field-effect mobility with temperature; Magnetotransport data; Optical, AFM, and PFM image of different field-effect transistors; STEM images of contacts; Output and transfer curves of FETs; Temperature scaling of subthreshold swing and threshold voltage difference; Comparison of maximum field-effect mobility for different structures; "], "subject"=>["", "Physical Sciences"]} 2026-01-28T23:08:41Z
RelatedMaterial create: {"material_type"=>"Dataset", "availability"=>nil, "link"=>"https://doi.org/10.13012/B2IDB-4015036_V2", "uri"=>"10.13012/B2IDB-4015036_V2", "uri_type"=>"DOI", "citation"=>" (2026): Data for Field-Effect Transistors from Artificial Charged Domain Walls in Stacked van der Waals Ferroelectric α-In2Se3. University of Illinois Urbana-Champaign. https://doi.org/10.13012/B2IDB-4015036_V2", "dataset_id"=>3192, "selected_type"=>"Dataset", "datacite_list"=>"IsPreviousVersionOf", "note"=>nil, "feature"=>nil} 2026-01-25T23:59:28Z
Dataset update: {"all_globus"=>[nil, true]} 2026-01-16T15:41:57Z
Dataset update: {"all_medusa"=>[nil, true]} 2026-01-16T15:36:47Z
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