Data for Field-Effect Transistors from Artificial Charged Domain Walls in Stacked van der Waals Ferroelectric α-In2Se3
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Dataset Description |
Note: This dataset has been updated. Please visit V2 instead: https://doi.org/10.13012/B2IDB-4015036_V2 Room-temperature transfer curves; Benchmarking conductance; STEM images of charged domain walls; Temperature-dependent transfer curves; Scaling of conductance, hopping length, threshold voltage, trap density, and field-effect mobility with temperature; Magnetotransport data; Optical, AFM, and PFM image of different field-effect transistors; STEM images of contacts; Output and transfer curves of FETs; Temperature scaling of subthreshold swing and threshold voltage difference; Comparison of maximum field-effect mobility for different structures; |
Subject |
Physical Sciences |
License |
CC BY |
Funder |
U.S. National Science Foundation (NSF)-Grant:DMR-2309037 |
Corresponding Creator |
Arend van der Zande |
Downloaded |
68 times |
| Version | DOI | Comment | Publication Date |
|---|---|---|---|
| 2 | 10.13012/B2IDB-4015036_V2 | Some files in the dataset.zip got updated. Updated the Dataset guideline to match the new dataset. | 2026-01-28 |
| 1 | 10.13012/B2IDB-4015036_V1 | 2025-11-19 |
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| RelatedMaterial | update: {"note"=>[nil, ""]} | 2026-01-28T23:08:41Z |
| Dataset | update: {"description"=>["Room-temperature transfer curves; Benchmarking conductance; STEM images of charged domain walls; Temperature-dependent transfer curves; Scaling of conductance, hopping length, threshold voltage, trap density, and field-effect mobility with temperature; Magnetotransport data; Optical, AFM, and PFM image of different field-effect transistors; STEM images of contacts; Output and transfer curves of FETs; Temperature scaling of subthreshold swing and threshold voltage difference; Comparison of maximum field-effect mobility for different structures; ", "<b>Note:</b> This dataset has been updated. Please visit V2 instead: <a herf=\"https://doi.org/10.13012/B2IDB-4015036_V2\">https://doi.org/10.13012/B2IDB-4015036_V2</a>\r\n\r\nRoom-temperature transfer curves; Benchmarking conductance; STEM images of charged domain walls; Temperature-dependent transfer curves; Scaling of conductance, hopping length, threshold voltage, trap density, and field-effect mobility with temperature; Magnetotransport data; Optical, AFM, and PFM image of different field-effect transistors; STEM images of contacts; Output and transfer curves of FETs; Temperature scaling of subthreshold swing and threshold voltage difference; Comparison of maximum field-effect mobility for different structures; "], "subject"=>["", "Physical Sciences"]} | 2026-01-28T23:08:41Z |
| RelatedMaterial | create: {"material_type"=>"Dataset", "availability"=>nil, "link"=>"https://doi.org/10.13012/B2IDB-4015036_V2", "uri"=>"10.13012/B2IDB-4015036_V2", "uri_type"=>"DOI", "citation"=>" (2026): Data for Field-Effect Transistors from Artificial Charged Domain Walls in Stacked van der Waals Ferroelectric α-In2Se3. University of Illinois Urbana-Champaign. https://doi.org/10.13012/B2IDB-4015036_V2", "dataset_id"=>3192, "selected_type"=>"Dataset", "datacite_list"=>"IsPreviousVersionOf", "note"=>nil, "feature"=>nil} | 2026-01-25T23:59:28Z |
| Dataset | update: {"all_globus"=>[nil, true]} | 2026-01-16T15:41:57Z |
| Dataset | update: {"all_medusa"=>[nil, true]} | 2026-01-16T15:36:47Z |