Illinois Data Bank - Dataset

Enhancing Carrier Mobility In Monolayer MoS2 Transistors With Process Induced Strain
Cite this dataset:
Zhang, Yue; Zhao, Helin; Huang, Siyuan; Hossain, Mohhamad Abir; van der Zande, Arend (2024): Enhancing Carrier Mobility In Monolayer MoS2 Transistors With Process Induced Strain. University of Illinois at Urbana-Champaign. https://doi.org/10.13012/B2IDB-4074704_V1
Dataset Description

Read me file for the data repository

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This repository has raw data for the publication "Enhancing Carrier Mobility In Monolayer MoS2 Transistors With Process Induced Strain". We arrange the data following the figure in which it first appeared. For all electrical transfer measurement, we provide the up-sweep and down-sweep data, with voltage units in V and conductance unit in S. All Raman modes have unit of cm^-1.

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How to use this dataset

All data in this dataset is stored in binary Numpy array format as .npy file.
To read a .npy file: use the Numpy module of the python language, and use np.load() command.
Example: suppose the filename is example_data.npy. To load it into a python program, open a Jupyter notebook, or in the python program, run:

import numpy as np
data = np.load("example_data.npy")

Then the example file is stored in the data object.

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Subject Physical Sciences
License CC BY
Corresponding Creator Arend van der Zande
Downloaded 119 times
Version DOI Comment Publication Date
1 10.13012/B2IDB-4074704_V1 2024-04-19

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Dataset update: {"version_comment"=>[nil, ""], "subject"=>[nil, "Physical Sciences"]} 2024-05-03T20:35:11Z