Illinois Data Bank

Data for Strain-resilient field-effect transistors based on wrinkled graphene/MoS2 heterostructures

Cite this dataset:
Kim, Hyunchul; Zhao, Helin; van der Zande, Arend (2023): Data for Strain-resilient field-effect transistors based on wrinkled graphene/MoS2 heterostructures. University of Illinois at Urbana-Champaign. https://doi.org/10.13012/B2IDB-6434046_V1

Dataset Description

This data set includes all of data related to strain-resilient FETs based on 2D heterostructures including optical images of FETs, Raman characteristics data, Transport measurement data, and AFM topography data.

Subject

Physical Sciences

Keywords

 2D materials; Stretchable electronics

License

 CC BY

Funder

 U.S. National Science Foundation (NSF)-Grant:DMR-1720633

Corresponding Creator

 Arend van der Zande

Downloaded

 4110 times
Version DOI Comment Publication Date
1 10.13012/B2IDB-6434046_V1 2023-08-24

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Contact the Research Data Service for help interpreting this log.

Dataset update: {"all_globus"=>[nil, true]} 2026-01-16T15:37:34Z
Dataset update: {"all_medusa"=>[nil, true]} 2026-01-16T15:35:55Z
Dataset update: {"publication_state"=>["file embargo", "released"]} 2023-08-24T08:00:08Z
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