Illinois Data Bank

Data for: "Enhancement of Hole Mobility in Monolayer WSe2 via Process-Induced Compression"

Cite this dataset:
Zhao, He Lin; Afrid, Sheikh; Yoon, Dongyoung; Islam, Zakaria; Martin, Zachary; Chen, Sihan; van der Zande, Arend; Rakheja, Shaloo; Huang, Pinshane (2026): Data for: "Enhancement of Hole Mobility in Monolayer WSe2 via Process-Induced Compression". University of Illinois Urbana-Champaign.

Dataset Description

This dataset corresponds to the project "Enhancement of Hole Mobility in Monolayer WSe2 via Process-Induced Strain".
Included are:
Photoluminescence measurements, transport measurements, atomc force microscope images of strained p-doped WSe2 monolayer FETs,
Finite-element analysis of strained AlOx-on-WSe2,
Wafer bending topography data of AlOx-on-silica,
Full-band simulation scripts and data of strained WSe2.

Author contacts by dataset:
Primary corresponding author and PI for experimentation: A.M.v.d. Zande
PI for simulation: S. Rakheja
PI for STEM: P.Y. Huang
General fabrication and characterization: H.L. Zhao
General simulation: S.M.T.S. Afrid
FEA analysis: Z. Islam
Wafer bending tests: D.Y. Yoon
STEM images: Z. Martin
Tungsten oxy-selenide formation: S. Chen

Keywords

 2D materials, WSe2, Transistors, Strain engineering, Mobility, Photoluminescence, Simulation, Transport, Density functional theory, Finite-element

License

 CC0

Funder

 U.S. National Science Foundation (NSF)-Grant:DMR-2309037

Corresponding Creator

 Arend van der Zande
Version DOI Comment Publication Date
strain_enhanced_wse2_data.zip 8.01 MB File
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