| Version | DOI | Comment | Publication Date |
|---|---|---|---|
| 1 | 10.13012/B2IDB-7325893_V1 | 2024-01-04 |
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| RelatedMaterial | create: {"material_type"=>"Article", "availability"=>nil, "link"=>"https://doi.org/10.1021/acs.nanolett.3c05091", "uri"=>"10.1021/acs.nanolett.3c05091", "uri_type"=>"DOI", "citation"=>"Hyunchul Kim, He Lin Zhao, and Arend M. van der Zande. (2024). Stretchable Thin-Film Transistors Based on Wrinkled Graphene and MoS2 Heterostructures. Nano Letters Article ASAP. DOI: 10.1021/acs.nanolett.3c05091", "dataset_id"=>2622, "selected_type"=>"Article", "datacite_list"=>"IsSupplementTo", "note"=>"", "feature"=>false} | 2024-01-17T18:57:07Z |
| Dataset | update: {"description"=>["This data set includes all of data related to stretchable TFTs based on 2D heterostructures including optical images of TFTs, Raman and Photoluminescence characteristics data, Transport measurement data, and AFM topography data.\r\nAbstract\r\nTwo-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel, and characterized them with Raman spectroscopy and transport measurements...", "This data set includes all of data related to stretchable TFTs based on 2D heterostructures including optical images of TFTs, Raman and Photoluminescence characteristics data, Transport measurement data, and AFM topography data.\r\nAbstract\r\nTwo-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel, and characterized them with Raman spectroscopy and transport measurements."], "version_comment"=>[nil, ""], "subject"=>[nil, "Physical Sciences"]} | 2024-01-17T18:57:07Z |
| Creator | update: {"row_position"=>[3, 2]} | 2024-01-05T02:47:11Z |
| Creator | update: {"row_position"=>[2, 1]} | 2024-01-05T02:47:11Z |
| Creator | update: {"row_position"=>[1, 3]} | 2024-01-05T02:47:11Z |
| Dataset | update: {"description"=>["This data set includes all of data related to stretchable TFTs based on 2D heterostructures including optical images of TFTs, Raman and Photoluminescence characteristics data, Transport measurement data, and AFM topography data.", "This data set includes all of data related to stretchable TFTs based on 2D heterostructures including optical images of TFTs, Raman and Photoluminescence characteristics data, Transport measurement data, and AFM topography data.\r\nAbstract\r\nTwo-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel, and characterized them with Raman spectroscopy and transport measurements..."]} | 2024-01-05T02:47:11Z |